Tung-Po Hsieh

Title: Innovations of Tung-Po Hsieh

Introduction

Tung-Po Hsieh is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work has been instrumental in advancing semiconductor structures, which are crucial for modern electronic devices.

Latest Patents

One of his latest patents is a semiconductor structure with a doped via plug. This innovative structure includes a gate structure over a substrate, with source and drain structures positioned on opposite sides of the gate. Additionally, it features a dielectric layer that covers the gate and source/drain structures, along with a via plug that passes through the dielectric layer and incorporates a first group IV element. The dielectric layer is composed of a second group IV element, a first compound, and a second compound, which includes elements from the first compound and the first group IV element. Another notable patent is also a semiconductor structure with a doped via plug, which includes a gate structure over a fin structure and a source/drain structure adjacent to the gate. This structure also features a first contact plug and a first via plug, surrounded by a dielectric layer.

Career Highlights

Tung-Po Hsieh has worked with leading organizations in the semiconductor industry, including the Industrial Technology Research Institute and Taiwan Semiconductor Manufacturing Company. His experience in these institutions has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Throughout his career, Tung-Po Hsieh has collaborated with notable colleagues such as Su-Hao Liu and Hong-Chih Liu. These partnerships have contributed to the successful development of his patents and advancements in semiconductor technology.

Conclusion

Tung-Po Hsieh's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the development of modern electronic devices.