The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Aug. 31, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tung-Po Hsieh, Hsinchu, TW;

Su-Hao Liu, Jhongpu Township, Chiayi County, TW;

Hong-Chih Liu, Zhubei, TW;

Jing-Huei Huang, Yuanshan Township, Yilan County, TW;

Jie-Huang Huang, Taoyuan, TW;

Lun-Kuang Tan, Hsinshu, TW;

Huicheng Chang, Tainan, TW;

Liang-Yin Chen, Hsinchu, TW;

Kuo-Ju Chen, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 23/532 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/76816 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 23/5226 (2013.01); H01L 23/53261 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a gate structure over a fin structure. The semiconductor structure also includes a source/drain structure in the fin structure and adjacent to the gate structure. The semiconductor structure also includes a first contact plug over the source/drain structure. The semiconductor structure also includes a first via plug over the first contact plug. The semiconductor structure also includes a dielectric layer surrounding the first via plug. The first via plug includes a first group IV element and the dielectric layer includes the first group IV element and a second group IV element.


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