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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10763168 B1

PDFFull Text
Date of Patent:
Sep. 01, 2020

Filed:

Jun. 28, 2018

Semiconductor structure with doped via plug and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tung-Po Hsieh, Hsinchu, TW;

Su-Hao Liu, Jhongpu Township, Chiayi County, TW;

Hong-Chih Liu, Zhubei, TW;

Jing-Huei Huang, Yuanshan Township, Yilan County, TW;

Jie-Huang Huang, Taoyuan, TW;

Lun-Kuang Tan, Hsinchu, TW;

Huicheng Chang, Tainan, TW;

Liang-Yin Chen, Hsinchu, TW;

Kuo-Ju Chen, Taichung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

David A Zarneke

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 23/532 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/76816 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 23/5226 (2013.01); H01L 23/53261 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a first contact plug and a first via plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The first contact plug is positioned over the source/drain structure. The first via plug is positioned over the first contact plug. The first via plug includes a first group IV element.

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