Industrial Technology Research Institute

Taiwan Semiconductor Manufacturing Comp. Ltd.

Tung-Po Hsieh

Huicheng Chang

Liang-Yin Chen

Su-Hao Liu

Kuo-Ju Chen

Lun-Kuang Tan

Jing-Huei Huang

Jie-Huang Huang

Hong-Chih Liu

Chien-Rong Huang

Song-Yeu Tsai

Hung-Ru Hsu

Wei-Tse Hsu

Fu-Ming Lin

Lung-Teng Cheng

Yeong-Lin Lai

Wei-Chien Chen

Li-Chih Chang

Ding-Wen Chiou

Ang-Lun Lee

A semiconductor structure is provided. The semiconductor structure includes a gate structure over a substrate. The semiconductor structure also includes source/drain structures on opposite sides of the gate structure. The semiconductor structure also includes a dielectric layer over the gate structure and the source/drain structures. The semiconductor structure also includes a via plug passing through the dielectric layer and including a first group IV element. The dielectric layer includes a second group IV element, a first compound, and a second compound, and the second compound includes elements in the first compound and the first group IV element.

Semiconductor structure with doped via plug

A semiconductor structure is provided. The semiconductor structure includes a gate structure over a fin structure. The semiconductor structure also includes a source/drain structure in the fin structure and adjacent to the gate structure. The semiconductor structure also includes a first contact plug over the source/drain structure. The semiconductor structure also includes a first via plug over the first contact plug. The semiconductor structure also includes a dielectric layer surrounding the first via plug. The first via plug includes a first group IV element and the dielectric layer includes the first group IV element and a second group IV element.

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a first contact plug and a first via plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The first contact plug is positioned over the source/drain structure. The first via plug is positioned over the first contact plug. The first via plug includes a first group IV element.

Semiconductor structure with doped via plug and method for forming the same

An expandable photovoltaic submodule comprises an adapter. The adapter comprises: an upper level port, wherein the upper level port comprises a front-positive terminal, a front-negative terminal, a first rear-positive terminal, and a first rear-negative terminal; a lower level port, wherein the lower level port comprises a second rear-positive terminal and a second rear-negative terminal; a first solar cell port, wherein the first solar cell port comprises a cell positive terminal and a cell negative terminal; and a plurality of potential lines coupled to the upper level port, the lower level port, and the first solar cell port, wherein the plurality of potential lines are adapted to series or parallel connections of at least two levels.

Expandable photovoltaic submodules

A solar cell structure for wireless charging includes a substrate and at least one thin film solar cell disposed on a surface of the substrate, wherein the thin film solar cell has a winding coil structure. Accordingly, in the thin film solar cell, the electrode which is the winding coil structure may be used as electromagnetic induction coil or millimeter-wave radio wave receiving radiator.

Solar cell structure for wireless charging

A chemical bath deposition (CBD) apparatus includes a first cap, a second cap, and a solution input/output device. The second cap is arranged corresponding to the first cap so as to form a deposition space. The solution input/output device is located in the first cap so as to feed a solution into/out of the deposition space. The position of the solution input/output device is fixed, or the solution input/output device is movable in the deposition space.

Chemical bath deposition (CBD) apparatus

The disclosure discloses a method for modifying the light absorption layer, including: (a) providing a substrate; (b) forming a light absorption layer on the substrate, wherein the light absorption layer includes a Group IB element, Group IIIA element and Group VIA element; (c) forming a slurry on the light absorption layer, wherein the slurry includes a Group VIA element; and (d) conducting a thermal process for the light absorption layer with the slurry.

Method for modifying light absorption layer

Growing community of inventors

Hsinchu, Taiwan

Tung-Po Hsieh