Tsung-Min Huang

This inventor holds 42 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2013-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsung-Min Huang. Retrieved from https://idiyas.com/inventor/tsung-min-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 42 (Patent Applications = 1)

% Patents Active = 47.6

Average Co-Inventor Count = 3.1

ph-index = 6

Forward Citations = 871(Granted Patents)

Location History:

Lujhou, TW (2013 - 2014)
Taichung, TW (2014 - 2021)

Company Filing History:

42 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2013-2021

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Areas of Expertise:

Semiconductor Fabrication

Spacer-Damage-Free Etching

Self-Aligned Patterning

Interconnect Structure

Copper Barrier Layer

Integrated Circuit

Trench Formation

Self-Repairing Process

Porous Dielectric Materials

Monolayer Pattern Formation

Small Pitch Features

Double Spacer Patterning

42 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10916443 - Spacer-damage-free etching (2021-02-09),

2. 10283371 - Spacer-damage-free etching (2019-05-07),

3. 10186455 - Interconnect structure and methods of making same (2019-01-22),

4. 10049878 - Self-aligned patterning process (2018-08-14),

5. 9947535 - Trench formation using horn shaped spacer (2018-04-17),

6. 9911646 - Self-aligned double spacer patterning process (2018-03-06),

7. 9831117 - Self-aligned double spacer patterning process (2017-11-28),

8. 9818695 - Material and process for copper barrier layer (2017-11-14),

9. 9806026 - Self repairing process for porous dielectric materials (2017-10-31),

10. 9768031 - Semiconductor device manufacturing methods (2017-09-19),

11. 9735048 - Semiconductor device and fabricating process for the same (2017-08-15),

12. 9728408 - Method of semiconductor integrated circuit fabrication (2017-08-08),

13. 9679803 - Method for forming different patterns in a semiconductor structure using a single mask (2017-06-13),

14. 9646932 - Method for forming interconnect structure that avoids via recess (2017-05-09),

15. 9607850 - Self-aligned double spacer patterning process (2017-03-28),

Title: The Innovative Journey of Inventor Tsung-Min Huang

Introduction: Tsung-Min Huang, a talented inventor hailing from Taichung, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Huang's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Tsung-Min Huang has established himself as a leading figure in the tech industry. His work has been instrumental in shaping the future of sustainable energy solutions.

Collaborations: Throughout his career, Huang has collaborated with various research institutions and universities to further his research and bring his inventions to life. His partnerships have led to the successful implementation of several cutting-edge technologies.

Conclusion: Tsung-Min Huang's dedication to innovation and his passion for creating a more sustainable future have solidified his position as a respected inventor in the field of technology. His contributions continue to inspire and drive progress in the industry.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: