The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Sep. 04, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yung-Hsu Wu, Taipei, TW;
Tsung-Min Huang, Taichung, TW;
Cheng-Hsiung Tsai, Zhunan Township, TW;
Chung-Ju Lee, Hsin-Chu, TW;
Tien-I Bao, Dayuan Township, TW;
Shau-Lin Shue, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Embodiments of the present disclosure are a method of forming a semiconductor device and methods of patterning a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including forming a first hard mask layer over a semiconductor device layer, the first hard mask layer comprising a metal-containing material, forming a second hard mask layer over the first hard mask layer, and forming a first set of metal-containing spacers over the second hard mask layer. The method further includes patterning the second hard mask layer using the first set of metal-containing spacers as a mask, forming a second set of metal-containing spacers on sidewalls of the patterned second hard mask layer, and patterning the first hard mask layer using the second set of metal-containing spacers as a mask.