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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9947535 B1

PDFFull Text
Date of Patent:
Apr. 17, 2018

Filed:

Dec. 05, 2016

Trench formation using horn shaped spacer

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Tsung-Min Huang, Taichung, TW;

Chung-Ju Lee, Hsin-Chu, TW;

Yung-Hsu Wu, Taipei, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Timor Karimy

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/32 (2006.01); H01L 21/321 (2006.01); H01L 21/3105 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/31056 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32 (2013.01); H01L 21/3212 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/53228 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method includes forming a mandrel layer over a target layer, and etching the mandrel layer to form mandrels. The mandrels have top widths greater than respective bottom widths, and the mandrels define a first opening in the mandrel layer. The first opening has an I-shape and includes two parallel portions and a connecting portion interconnecting the two parallel portions. Spacers are formed on sidewalls of the first opening. The spacers fill the connecting portion, wherein a center portion of each of the two parallel portions is unfilled by the spacers. Portions of the first opening that are unfilled by the spacers are extended into the target layer.

Find Patent Forward Citations

Huang, Tsung-Min. (2018). Trench formation using horn shaped spacer (U.S. Patent No. 9947535). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9947535

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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