The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Jul. 31, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); H01L 21/0337 (2013.01); H01L 21/3081 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01);
Abstract
Semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming a first pattern in a hard mask using a first lithography process, and forming a second pattern in the hard mask using a second lithography process. A protective layer is formed over the hard mask. Portions of the hard mask and portions of the protective layer are altered using a self-aligned double patterning (SADP) method.