logo

For the Inventor, By the Inventor

Hsinchu, Taiwan

Tseung-Yuen Tseng

This inventor holds 14 USPTO granted patents and 3 published patent applications. Top assignees: Winbond Electronics Corporation, National Yang Ming Chiao Tung University, National Science Council. Active years: 2000-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tseung-Yuen Tseng. Retrieved from https://idiyas.com/inventor/tseung-yuen-tseng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 14 

% Patents Active = 78.6

Average Co-Inventor Count = 2.8

ph-index = 3

Forward Citations = 21(Granted Patents)


Location History:

  • Sin Jhu, TW (2006)
  • Hsinchu, TW (2000 - 2020)

Company Filing History:

goldMedal7 out of 2,114 
 
Winbond Electronics Corporation
 patents
silverMedal5 out of 1,247 
 
National Yang Ming Chiao Tung University
 patents
bronzeMedal1 out of 544 
 
National Science Council
 patents
4. 1 out of 14,087 
 
U.S. Philips Corporation
 patents

Years Active: 2000-2020

Loading Chart...
14 patents (USPTO):Explore Patents
1. 10601032 - Composite electrode material (2020-03-24),
2. 10181560 - Conductive-bridging random access memory and method for fabricating the same (2019-01-15),
3. 10043972 - Conductive-bridging random access memory (2018-08-07),
4. 9595397 - High energy density asymmetric pseudocapacitor and method of making the same (2017-03-14),
5. 8519375 - Non-volatile memory with oxygen vacancy barrier layer (2013-08-27),
6. 8470637 - Method for fabricating a resistor for a resistance random access memory (2013-06-25),
7. 8324068 - Nonvolatile memory and fabrication method thereof (2012-12-04),
8. 7851888 - Nonvolatile memory and fabrication method thereof (2010-12-14),
9. 7704114 - Gate controlled field emission triode and process for fabricating the same (2010-04-27),
10. 7459371 - Method for non-volatile memory fabrication (2008-12-02),
11. 7323733 - Nonvolatile memory and fabrication method thereof (2008-01-29),
12. 7015523 - Ferroelectric memory structure and fabrication method thereof (2006-03-21),
13. 6503374 - SBTN ferroelectric thin film and method for producing same (2003-01-07),
14. 6043974 - Ceramic (multilayer) capacitor and ceramic composition for use in such (2000-03-28),

**Title: Inventor Tseung-Yuen Tseng: A Pioneer in Composite Electrode Materials and Memory Technologies**

Introduction

Tseung-Yuen Tseng, based in Hsinchu, Taiwan, is an accomplished inventor with a remarkable portfolio consisting of 14 patents. His innovative work primarily focuses on advanced materials and memory technologies, showcasing his contributions to the fields of electronics and semiconductor technology.

Latest Patents

Among his latest patents, Tseng developed a composite electrode material designed for enhanced performance. This composite electrode material features multiple conductive material layers and active material layers, which are alternately stacked in a unique arrangement to optimize the efficiency of the electrode's surface.

Additionally, he holds a patent for a conductive-bridging random access memory and the method for its fabrication. This sophisticated memory solution comprises several layers, including a bottom electrode layer, an electrical resistance switching layer, and an ion source layer. The innovative design aims to improve data storage and retrieval processes in modern electronic devices.

Career Highlights

Throughout his career, Tseung-Yuen Tseng has worked with notable organizations, including Winbond Electronics Corporation and National Yang Ming Chiao Tung University. His involvement in these institutions has significantly influenced advancements in semiconductor technology and material sciences.

Collaborations

Tseng has collaborated with esteemed colleagues, such as Pang Lin and Chun-Chieh Lin. These partnerships reflect his commitment to fostering innovation and advancing research in his field, leveraging collective expertise to drive groundbreaking developments.

Conclusion

Tseung-Yuen Tseng stands out as a visionary inventor whose contributions to composite electrode materials and memory technologies are shaping the future of electronics. His extensive patent portfolio and collaborations highlight his dedication to innovation and the advancement of technology. As he continues to push the boundaries of research, Tseng remains a significant figure in the world of invention and innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…