The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2008

Filed:

Apr. 19, 2005
Applicants:

Tseung-yuen Tseng, Hsinchu, TW;

Chih-yi Liu, Tainan County, TW;

Pei-hsun Wu, Taichung County, TW;

Inventors:

Tseung-Yuen Tseng, Hsinchu, TW;

Chih-Yi Liu, Tainan County, TW;

Pei-Hsun Wu, Taichung County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory and a fabrication method thereof. The nonvolatile memory includes a substrate, a bottom electrode deposited on the substrate, a resistor layer deposited on the bottom electrode, and a top electrode on the resistor layer. The bottom electrode includes LaNiOand the resistor layer includes doped SrZrO.


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