The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2012

Filed:

Nov. 10, 2010
Applicants:

Tseung-yuen Tseng, Hsinchu, TW;

Chun-chieh Lin, Hualien, TW;

Chao-cheng Lin, Taichung, TW;

Inventors:

Tseung-Yuen Tseng, Hsinchu, TW;

Chun-Chieh Lin, Hualien, TW;

Chao-Cheng Lin, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

Non-volatile memories formed on a substrate and fabrication methods are disclosed. A bottom electrode comprising a metal layer is disposed on the substrate. A buffer layer comprising a LaNiOfilm is disposed over the metal layer. A resistor layer comprising a SrZrOfilm is disposed on the buffer layer. A top electrode is disposed on the resistor layer.


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