The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Jan. 15, 2004
Tseung-yuen Tseng, Sin Jhu, TW;
Shean Yiah Lee, Taninan, TW;
Tseung-Yuen Tseng, Sin Jhu, TW;
Shean Yiah Lee, Taninan, TW;
National Chiao-Tung University, Hsinchu, TW;
Abstract
A ferroelectric memory structure is disclosed. The ferroelectric memory structure includes a substrate, an insulating layer formed on the substrate, a plurality of oxide electrodes formed on the insulating layer, a ferroelectric layer formed on the insulating layer and the plurality of oxide electrodes, and a plurality of metallic electrodes formed on the ferroelectric layer and corresponding to the plurality of the oxide electrodes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile