The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Aug. 29, 2000
Applicant:
Inventors:
Tseung-Yuen Tseng, Hsinchu, TW;
Ming Shiahn Tsai, Tainan, TW;
Huei-Mei Tsai, Taoyuan, TW;
Pang Lin, Hsinchu, TW;
Assignee:
National Science Council, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/434 ;
U.S. Cl.
CPC ...
C23C 1/434 ;
Abstract
A novel SBTN (Sr Bi Ta Nb O ) thin film which exhibits satisfactory ferroelectric properties is disclosed, wherein a lies between 0.5 and 1, b lies between 2 and 2.7, c lies between 1 and 1.4, d lies between 0.6 and 1.1, and x lies between 8 and 10. The composition of Sr Bi Ta Nb O wherein x lies between 9 and 10 is preferred. The Sr Bi Ta Nb O thin film is formed by two-target off-axis RF magnetron sputtering at a temperature down to about 600° C. One target is formed of Sr Bi Ta Nb O , and the other target is formed of Bi O .