Taoyuan, Taiwan

Huei-Mei Tsai

This inventor holds 1 USPTO granted patent. Top assignee: National Science Council. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huei-Mei Tsai. Retrieved from https://idiyas.com/inventor/huei-mei-tsai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Innovations of Inventor Huei-Mei Tsai

Introduction

Huei-Mei Tsai is a notable inventor based in Taoyuan, Taiwan. She has made significant contributions to the field of materials science, particularly in the development of ferroelectric thin films. Her work has implications for various applications in electronics and energy storage.

Latest Patents

Huei-Mei Tsai holds a patent for a novel SBTN (Sr Bi Ta Nb O) ferroelectric thin film and the method for producing it. This innovative thin film exhibits satisfactory ferroelectric properties, with specific compositional ranges for its components. The preferred composition of Sr Bi Ta Nb O has x values between 9 and 10. The thin film is produced using a two-target off-axis RF magnetron sputtering technique at temperatures as low as 600°C.

Career Highlights

Huei-Mei Tsai is affiliated with the National Science Council, where she continues to advance her research in ferroelectric materials. Her work has garnered attention for its potential to enhance the performance of electronic devices.

Collaborations

Huei-Mei Tsai collaborates with esteemed colleagues, including Tseung-Yuen Tseng and Ming Shiahn Tsai. These partnerships contribute to the innovative research environment in which she works.

Conclusion

Huei-Mei Tsai's contributions to the field of ferroelectric materials exemplify the impact of innovative research on technology. Her patent and ongoing work continue to influence advancements in electronics and materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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