Tsai-Jung Ho

This inventor holds 26 USPTO granted patents and 23 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsai-Jung Ho. Retrieved from https://idiyas.com/inventor/tsai-jung-ho

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 (Patent Applications = 23)

% Patents Active = 96.2

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 1,058(Granted Patents)

Location History:

Xihu, TW (2023)
Xihu Township, TW (2016 - 2024)
Changhua County, TW (2017 - 2024)

Company Filing History:

26 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2016-2026

Loading Chart...

Areas of Expertise:

Dielectric Layers

Semiconductor Device

Self-Aligned Contact

Metal Gate Structure

Fin Field-Effect Transistor

Gap Patterning

Air Spacer Formation

Hybrid Film Scheme

Topology Selective Layer

Dislocation Stress Memorization

Sacrificial Silicon Nitride

Spacer Film

26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12564028 - Dielectric layers having nitrogen-containing crusted surfaces (2026-02-24),

2. 12471357 - Semiconductor device and method (2025-11-11),

3. 12417948 - Hybrid film scheme for self-aligned contact (2025-09-16),

4. 12368098 - Methods of forming semiconductor device (2025-07-22),

5. 12302595 - Dummy hybrid film for self-alignment contact formation (2025-05-13),

6. 12293947 - Gap patterning for metal-to-source/drain plugs in a semiconductor device (2025-05-06),

7. 12255240 - Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drain (2025-03-18),

8. 12154973 - Fin field-effect transistor device and method (2024-11-26),

9. 12107163 - Semiconductor device structure having dislocation stress memorization and methods of forming the same (2024-10-01),

10. 12094952 - Air spacer formation with a spin-on dielectric material (2024-09-17),

11. 12087838 - Self-aligned contact hard mask structure of semiconductor device and method of forming same (2024-09-10),

12. 11973027 - Semiconductor device and methods of forming the same (2024-04-30),

13. 11842930 - Gap patterning for metal-to-source/drain plugs in a semiconductor device (2023-12-12),

14. 11742399 - Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drain (2023-08-29),

15. 11728218 - Semiconductor device and method (2023-08-15),

Title: The Innovative Journey of Tsai-Jung Ho

Introduction: Tsai-Jung Ho, a talented inventor hailing from Xihu, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Tsai-Jung Ho's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar panels with increased efficiency and durability.

Career Highlights: Throughout his illustrious career, Tsai-Jung Ho has been recognized for his innovative spirit and dedication to creating solutions that address pressing global challenges. His work has not only revolutionized the renewable energy sector but has also paved the way for sustainable development.

Collaborations: Tsai-Jung Ho has collaborated with leading research institutions and universities to further his research and bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of technological innovation and driving positive change in the world.

Conclusion: Tsai-Jung Ho's passion for innovation and commitment to excellence continue to inspire the next generation of inventors. His remarkable achievements underscore the importance of creativity and perseverance in shaping a better future for all.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

23 patents pending: