The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Feb. 04, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tsai-Jung Ho, Xihu Township, TW;
Tze-Liang Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming source/drain regions over the fin on opposing sides of the gate structure; forming a recess between gate spacers of the gate structure by recessing the gate structure below upper surfaces of the gate spacers; depositing a first layer of a dielectric material in the recess along sidewalls and a bottom of the recess; after depositing the first layer, performing a first etching process to remove portions of the first layer of the dielectric material; and after the first etching process, depositing a second layer of the dielectric material in the recess over the first layer of the dielectric material.