Semiconductor device structure having dislocation stress memorization and methods of forming the same

Abstract

A semiconductor device structure, along with methods of forming such, are described. In one embodiment, a method for forming a semiconductor device structure is provided. The method includes forming a sacrificial gate structure over a portion of a semiconductor fin, forming a gate spacer on opposing sides of the sacrificial gate structure, forming an amorphized region in the semiconductor fin not covered by the sacrificial gate structure and the gate spacer, wherein the amorphized region has an amorphous-crystalline interface having a first roughness, forming a stressor layer over the amorphized region, wherein the formation of the stressor layer recrystallizes the amorphous-crystalline interface from the first roughness to a second roughness that is less than the first roughness, and subjecting the amorphized region to an annealing process to recrystallize the amorphized region to a crystalline region, and the crystalline region comprising a dislocation.