Tenri, Japan

Toshiyuki Okumura

This inventor holds 31 USPTO granted patents, primarily in Nitride Semiconductor Devices. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 1991-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiyuki Okumura. Retrieved from https://idiyas.com/inventor/toshiyuki-okumura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 80.6

Average Co-Inventor Count = 2.0

ph-index = 10

Forward Citations = 318(Granted Patents)


Location History:

  • Nara, JP (2003 - 2009)
  • Tenri, JP (1991 - 2011)
  • Osaka, JP (2015)

Company Filing History:


Years Active: 1991-2015

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Areas of Expertise:
Nitride Semiconductor
Light-Emitting Element
Optical Amplifier
Semiconductor Laser
Photonic Crystal
Gallium Nitride
Multi-Quantum-Well
Resonator
Optical Device
Dielectric Reflector
Coupling Circuit
31 patents (USPTO):Explore Patents

Title: Toshiyuki Okumura: Pioneering Inventor from Tenri, Japan

Introduction: Toshiyuki Okumura is a renowned inventor hailing from Tenri, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Toshiyuki Okumura holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With over two decades of experience in the industry, Toshiyuki Okumura has worked with leading tech companies and research institutions, spearheading projects that have revolutionized various sectors.

Collaborations: Throughout his career, Toshiyuki Okumura has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his endeavors.

Conclusion: Toshiyuki Okumura's passion for pushing the boundaries of technology and his relentless pursuit of innovation continue to inspire the next generation of inventors and creators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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