The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Nov. 19, 2012
Masaya Ueda, Osaka, JP;
Yoshihiro Ueta, Osaka, JP;
Yuichi Sano, Osaka, JP;
Toshiyuki Okumura, Osaka, JP;
Masaya Ueda, Osaka, JP;
Yoshihiro Ueta, Osaka, JP;
Yuichi Sano, Osaka, JP;
Toshiyuki Okumura, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka, JP;
Abstract
To provide a nitride semiconductor light-emitting element in which a buffer layer provided between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer has a first buffer layer expressed by an equation of InGaN (0<x1≦1) and a second buffer layer expressed by an equation of InGaN (0≦x2<1, x2<x1) alternately laminated, an In composition x1 of the first buffer layer is changed, and the In composition x1 of at least one layer of the first buffer layers is higher than an In composition of the active layer, and a method for producing the same.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile