The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Nov. 20, 2003
Tomoki Ono, Pittsburgh, PA (US);
Shigetoshi Ito, Ikoma, JP;
Toshiyuki Okumura, Tenri, JP;
Hirokazu Mouri, Ikoma, JP;
Kyoko Matsuda, Daianji, JP;
Toshiyuki Kawakami, Nara, JP;
Takeshi Kamikawa, Mihara, JP;
Yoshihiko Tani, Tenri, JP;
Tomoki Ono, Pittsburgh, PA (US);
Shigetoshi Ito, Ikoma, JP;
Toshiyuki Okumura, Tenri, JP;
Hirokazu Mouri, Ikoma, JP;
Kyoko Matsuda, Daianji, JP;
Toshiyuki Kawakami, Nara, JP;
Takeshi Kamikawa, Mihara, JP;
Yoshihiko Tani, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.