The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Sep. 11, 2000
Applicant:
Inventors:
Yukio Yamasaki, Nara, JP;
Toshiyuki Okumura, Nara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/343 ;
U.S. Cl.
CPC ...
H01S 5/343 ;
Abstract
A nitride-contained semiconductor laser element includes a layer formed of an Al Ga N (0.08≦x1≦0.2) lower clad layer, an active layer formed of an alternate multilayer structure including an In Ga N well layer and an In Ga N barrier layer, and an Al Ga N (0.08≦x2≦0.2) upper clad layer layered in this order on a substrate, one or a plurality of In Ga N (0≦z≦0.2) buffer layer(s) of 200 nm or less in thickness being disposed in the lower clad layer and/or the upper clad layer.