The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Sep. 13, 2001
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A nitride semiconductor laser device having a low threshold current and low noise is provided. The laser device includes n-type and p-type layers made of nitride semiconductor and formed on a substrate, and a light emitting layer between the n-type and p-type layers. The light emitting layer is formed of a well layer or a combination of well and barrier layers. At least the well layer is made of nitride semiconductor containing element X, N and Ga, wherein element is at least one selected from the group consisting of As, P and Sb. The atomic fraction of element X is smaller than that of N. A maximum width through which current is injected into the light emitting layer via the p-type layer is from 1.0 &mgr;m to 4.0 &mgr;m.