The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Jan. 22, 2008
Kyoko Matsuda, Nara, JP;
Toshiyuki Okumura, Tenri, JP;
Kyoko Matsuda, Nara, JP;
Toshiyuki Okumura, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka-shi, JP;
Abstract
An active layer has a quantum well structure formed of InGaAsP, and includes a saturable absorption region and optical amplification regions. To the saturable absorption region, a voltage is applied through a p-electrode, independent from the optical amplification region. To the optical amplification regions, currents are injected through p-electrodes, respectively. An input light Pin entering through a plane of incidence is generated by adding optical noise of white noise, to a light signal assuming binary optical intensity of '1' or '0'. The saturable absorption region and optical amplification regions are formed satisfying conditions that a waveform converting element provides a semiconductor laser of bistable state.