The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Jan. 17, 2002
Toshiyuki Okumura, Tenri, JP;
Toshiyuki Okumura, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A gallium nitride semiconductor laser device has an active layer () made of a nitride semiconductor containing at least indium and gallium between an n-type cladding layer () and a p-type cladding layer (). The active layer () is composed of two quantum well layers () and a barrier layer () interposed between the quantum well layers, and constitutes an oscillating section of the semiconductor laser device. The quantum well layers () and the barrier layer () have thicknesses of, preferably, 10 nm or less. In this semiconductor laser device, electrons and holes can be uniformly distributed in the two quantum well layers (). In addition, electrons and holes are effectively injected into the quantum well layers from which electrons and holes have already been disappeared by recombination. Consequently, the semiconductor laser device has an excellent laser oscillation characteristic.