IDiyas

For the Inventor, By the Inventor

Austin, TX, United States of America

Toni D Van Gompel

USPTO Granted Patents = 8 

Average Co-Inventor Count = 4.5

ph-index = 4

Forward Citations = 38(Granted Patents)


Company Filing History:

goldMedal8 out of 5,491 
 
Freescale Semiconductor,inc.
 patents

Years Active: 2005-2014

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8 patents (USPTO):
1. 8766362 - Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner (2014-07-01),
2. 8236638 - Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner (2012-08-07),
3. 7687370 - Method of forming a semiconductor isolation trench (2010-03-30),
4. 7670895 - Process of forming an electronic device including a semiconductor layer and another layer adjacent to an opening within the semiconductor layer (2010-03-02),
5. 7528078 - Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer (2009-05-05),
6. 7491622 - Process of forming an electronic device including a layer formed using an inductively coupled plasma (2009-02-17),
7. 7037857 - Method for elimination of excessive field oxide recess for thin Si SOI (2006-05-02),
8. 6979627 - Isolation trench (2005-12-27),

Title: Celebrating the Innovations of Toni D Van Gompel

Introduction

Toni D Van Gompel, an accomplished inventor based in Austin, TX, is known for his significant contributions to the field of semiconductor technology. With a total of 8 patents to his name, Toni continues to push the boundaries of innovation and development within his industry.

Latest Patents

Among Toni's latest patents is a groundbreaking innovation focused on shallow trench isolation for Silicon On Insulator (SOI) structures. This patent outlines a method for creating a semiconductor device, which involves several key steps: providing a layer stack that includes a semiconductor layer and a dielectric layer disposed between the substrate and the semiconductor layer, creating a trench that extends through the semiconductor layer and exposes a portion of the dielectric layer, forming a spacer structure adjacent to the sidewall of the trench, and finally, forming a stressor layer on the trench's bottom. This invention exemplifies his expertise in semiconductor device fabrication and contributes significantly to the efficiency and performance of electronic components.

Career Highlights

Toni is currently employed at Freescale Semiconductor, Inc., where he utilizes his innovative spirit to advance semiconductor technologies. His career is marked by a relentless pursuit of improvement and innovation, driving progress and efficiency in semiconductor device production.

Collaborations

Throughout his career, Toni has collaborated with talented individuals, including his coworkers Michael D Turner and Rode R Mora. These collaborative efforts have fostered a creative environment that encourages the exchange of ideas and enhances the potential for groundbreaking inventions.

Conclusion

Toni D Van Gompel serves as an inspiring figure in the realm of semiconductor innovation. His contributions through patents and collaborations not only showcase his inventive capabilities but also underscore the importance of innovation in technology. As he continues to develop new ideas and technologies, his work significantly impacts the industry, paving the way for future advancements.

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