The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Apr. 30, 2004
Choh-fei Yeap, Austin, TX (US);
Yongjoo Jeon, Austin, TX (US);
Michael D. Turner, San Antonio, TX (US);
Toni D. Van Gompel, Austin, TX (US);
Choh-Fei Yeap, Austin, TX (US);
Yongjoo Jeon, Austin, TX (US);
Michael D. Turner, San Antonio, TX (US);
Toni D. Van Gompel, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A process for forming an isolation trench in a wafer. The process includes depositing (e.g. by a directional deposition process) a first dielectric material in the trench and then depositing a second dielectric material (e.g. by a directional deposition process) over the first dielectric material in the trench. A third material is deposited in the trench on the second layer. The second material and the third material are selectively etchable with respect to each other. In one example, the first material has a lower dielectric constant than the second material.