Tomohiko Ohta

This inventor holds 32 USPTO granted patents, primarily in Silicon Crystal Production. Top assignee: Shin-Etsu Handotai Co., Ltd.. Active years: 1998-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomohiko Ohta. Retrieved from https://idiyas.com/inventor/tomohiko-ohta

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32

% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 8

Forward Citations = 154(Granted Patents)

Location History:

Nishishirakawa, JP (1998 - 1999)
Fukushima-ken, JP (1998 - 2002)
Nishishirakawa-gun, JP (2002 - 2003)
Fukshima, JP (2004)
Fukushima, JP (2003 - 2007)
Gunma, JP (2007 - 2009)
Shirakawa, JP (2017 - 2024)

Company Filing History:

32 out of 1,099

Shin-Etsu Handotai Co., Ltd.

patents

Years Active: 1998-2025

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Areas of Expertise:

Single-Crystal Pulling

Silicon Wafer

Epitaxial Wafer

Czochralski Method

Nitrogen Doping

Silicon Semiconductor

Wafer Bonding

Crystal Defects

Silicon Ingot

Heater Apparatus

Melt Leakage

Production Equipment

32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12227872 - Single-crystal pulling apparatus and single-crystal pulling method (2025-02-18),

2. 12188153 - Single-crystal pulling apparatus with saddle-shaped superconducting coils and single-crystal pulling method (2025-01-07),

3. 12084788 - Method for producing a silicon single crystal doped with nitrogen and having a controlled amount of carbon impurities (2024-09-10),

4. 9777394 - Method of producing silicon single crystal ingot (2017-10-03),

5. 7521334 - Method for producing direct bonded wafer and direct bonded wafer (2009-04-21),

6. 7294196 - Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal (2007-11-13),

7. 7226507 - Method for producing single crystal and single crystal (2007-06-05),

8. 7201801 - Heater for manufacturing a crystal (2007-04-10),

9. 7179330 - Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer (2007-02-20),

10. 7129123 - SOI wafer and a method for producing an SOI wafer (2006-10-31),

11. 6913646 - Silicon single crystal wafer and method for producing silicon single crystal (2005-07-05),

12. 6893499 - Silicon single crystal wafer and method for manufacturing the same (2005-05-17),

13. 6764548 - Apparatus and method for producing silicon semiconductor single crystal (2004-07-20),

14. 6632411 - Silicon wafer and method for producing silicon single crystal (2003-10-14),

15. 6632280 - Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal (2003-10-14),

Title: The Innovative Journey of Tomohiko Ohta

Introduction: Tomohiko Ohta, a distinguished inventor hailing from Fukushima, Japan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Tomohiko Ohta's latest patents focus on advancements in artificial intelligence and robotics, showcasing his commitment to pushing the boundaries of technological possibilities.

Career Highlights: With a career spanning over two decades, Tomohiko Ohta has established himself as a pioneer in the tech industry, with numerous patents and inventions that have revolutionized the way we interact with technology.

Collaborations: Throughout his career, Tomohiko Ohta has collaborated with leading tech companies and research institutions, fostering a culture of innovation and creativity that has led to groundbreaking discoveries in the field.

Conclusion: Tomohiko Ohta's relentless pursuit of innovation and his passion for pushing the limits of technology have solidified his position as a trailblazer in the world of inventions and patents.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]