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For the Inventor, By the Inventor

Fukushima, Japan

Tomohiko Ohta

This inventor holds 32 USPTO granted patents. Top assignee: Shin-Etsu Handotai Co., Ltd.. Active years: 1998-2025.

USPTO Granted Patents = 32

% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 8

Forward Citations = 154(Granted Patents)


Location History:

  • Nishishirakawa, JP (1998 - 1999)
  • Fukushima-ken, JP (1998 - 2002)
  • Nishishirakawa-gun, JP (2002 - 2003)
  • Fukshima, JP (2004)
  • Fukushima, JP (2003 - 2007)
  • Gunma, JP (2007 - 2009)
  • Shirakawa, JP (2017 - 2024)

Company Filing History:

goldMedal32 out of 1,099 
 
Shin-Etsu Handotai Co., Ltd.
 patents

Years Active: 1998-2025

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Areas of Expertise:
Single Crystal Pulling
Silicon Single Crystal
Czochralski Method
Epitaxial Wafer
Silicon Wafer
Superconducting Coils
Silicon Semiconductor
Direct Bonded Wafer
Crystal Defects
Heater for Crystal Manufacturing
Melt Leakage Prevention
Nitrogen Doping
32 patents (USPTO):Explore Patents
1. 12227872 - Single-crystal pulling apparatus and single-crystal pulling method (2025-02-18),
2. 12188153 - Single-crystal pulling apparatus with saddle-shaped superconducting coils and single-crystal pulling method (2025-01-07),
3. 12084788 - Method for producing a silicon single crystal doped with nitrogen and having a controlled amount of carbon impurities (2024-09-10),
4. 9777394 - Method of producing silicon single crystal ingot (2017-10-03),
5. 7521334 - Method for producing direct bonded wafer and direct bonded wafer (2009-04-21),
6. 7294196 - Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal (2007-11-13),
7. 7226507 - Method for producing single crystal and single crystal (2007-06-05),
8. 7201801 - Heater for manufacturing a crystal (2007-04-10),
9. 7179330 - Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer (2007-02-20),
10. 7129123 - SOI wafer and a method for producing an SOI wafer (2006-10-31),
11. 6913646 - Silicon single crystal wafer and method for producing silicon single crystal (2005-07-05),
12. 6893499 - Silicon single crystal wafer and method for manufacturing the same (2005-05-17),
13. 6764548 - Apparatus and method for producing silicon semiconductor single crystal (2004-07-20),
14. 6632411 - Silicon wafer and method for producing silicon single crystal (2003-10-14),
15. 6632280 - Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal (2003-10-14),

Title: The Innovative Journey of Tomohiko Ohta

Introduction: Tomohiko Ohta, a distinguished inventor hailing from Fukushima, Japan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Tomohiko Ohta's latest patents focus on advancements in artificial intelligence and robotics, showcasing his commitment to pushing the boundaries of technological possibilities.

Career Highlights: With a career spanning over two decades, Tomohiko Ohta has established himself as a pioneer in the tech industry, with numerous patents and inventions that have revolutionized the way we interact with technology.

Collaborations: Throughout his career, Tomohiko Ohta has collaborated with leading tech companies and research institutions, fostering a culture of innovation and creativity that has led to groundbreaking discoveries in the field.

Conclusion: Tomohiko Ohta's relentless pursuit of innovation and his passion for pushing the limits of technology have solidified his position as a trailblazer in the world of inventions and patents.

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