IDiyas

For the Inventor, By the Inventor

Fukushima, Japan

Tomohiko Ohta

USPTO Granted Patents = 32

Average Co-Inventor Count = 3.8

ph-index = 8

Forward Citations = 149(Granted Patents)


Location History:

  • Nishishirakawa, JP (1998 - 1999)
  • Fukushima-ken, JP (1998 - 2002)
  • Nishishirakawa-gun, JP (2002 - 2003)
  • Fukshima, JP (2004)
  • Fukushima, JP (2003 - 2007)
  • Gunma, JP (2007 - 2009)
  • Shirakawa, JP (2017 - 2024)

Company Filing History:

goldMedal32 out of 1,099 
 
Shin-etsu Handotai Co., Ltd.
 patents

Years Active: 1998-2025

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32 patents (USPTO):Explore Patents
1. 12227872 - Single-crystal pulling apparatus and single-crystal pulling method (2025-02-18),
2. 12188153 - Single-crystal pulling apparatus with saddle-shaped superconducting coils and single-crystal pulling method (2025-01-07),
3. 12084788 - Method for producing a silicon single crystal doped with nitrogen and having a controlled amount of carbon impurities (2024-09-10),
4. 9777394 - Method of producing silicon single crystal ingot (2017-10-03),
5. 7521334 - Method for producing direct bonded wafer and direct bonded wafer (2009-04-21),
6. 7294196 - Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal (2007-11-13),
7. 7226507 - Method for producing single crystal and single crystal (2007-06-05),
8. 7201801 - Heater for manufacturing a crystal (2007-04-10),
9. 7179330 - Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer (2007-02-20),
10. 7129123 - SOI wafer and a method for producing an SOI wafer (2006-10-31),
11. 6913646 - Silicon single crystal wafer and method for producing silicon single crystal (2005-07-05),
12. 6893499 - Silicon single crystal wafer and method for manufacturing the same (2005-05-17),
13. 6764548 - Apparatus and method for producing silicon semiconductor single crystal (2004-07-20),
14. 6632411 - Silicon wafer and method for producing silicon single crystal (2003-10-14),
15. 6632280 - Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal (2003-10-14),

Title: The Innovative Journey of Tomohiko Ohta

Introduction: Tomohiko Ohta, a distinguished inventor hailing from Fukushima, Japan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Tomohiko Ohta's latest patents focus on advancements in artificial intelligence and robotics, showcasing his commitment to pushing the boundaries of technological possibilities.

Career Highlights: With a career spanning over two decades, Tomohiko Ohta has established himself as a pioneer in the tech industry, with numerous patents and inventions that have revolutionized the way we interact with technology.

Collaborations: Throughout his career, Tomohiko Ohta has collaborated with leading tech companies and research institutions, fostering a culture of innovation and creativity that has led to groundbreaking discoveries in the field.

Conclusion: Tomohiko Ohta's relentless pursuit of innovation and his passion for pushing the limits of technology have solidified his position as a trailblazer in the world of inventions and patents.

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