The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Nov. 29, 2005
Norihiro Kobayashi, Gunma, JP;
Toru Ishizuka, Gunma, JP;
Tomohiko Ohta, Gunma, JP;
Hiroji Aga, Gunma, JP;
Yasuo Nagaoka, Gunma, JP;
Norihiro Kobayashi, Gunma, JP;
Toru Ishizuka, Gunma, JP;
Tomohiko Ohta, Gunma, JP;
Hiroji Aga, Gunma, JP;
Yasuo Nagaoka, Gunma, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.