The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Dec. 26, 2001
Masahiro Sakurada, Fukushima, JP;
Takeshi Kobayashi, Fukushima, JP;
Tatsuo Mori, Fukushima, JP;
Izumi Fusegawa, Fukushima, JP;
Tomohiko Ohta, Fukushima, JP;
Masahiro Sakurada, Fukushima, JP;
Takeshi Kobayashi, Fukushima, JP;
Tatsuo Mori, Fukushima, JP;
Izumi Fusegawa, Fukushima, JP;
Tomohiko Ohta, Fukushima, JP;
Shin-Etsu Handotai Co., Ltd., Toyko, JP;
Abstract
There can be provided a silicon single crystal wafer grown according to Czochralski method wherein the whole plane of the wafer is occupied by N region on the outside of OSF generated in a shape of a ring by thermal oxidation treatment and there exists no defect region detected by Cu deposition. Thereby, there can be produced a silicon single crystal wafer according to CZ method, which does not belong to any of V region rich in vacancies, OSF region and I region rich in interstitial silicons, and can surely improve electric characteristics such as oxide dielectric breakdown voltage characteristics or the like under stable manufacture conditions.