The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Jun. 28, 2001
Izumi Fusegawa, Fukushima, JP;
Koji Kitagawa, Fukushima, JP;
Ryoji Hoshi, Fukushima, JP;
Masahiro Sakurada, Fukushima, JP;
Tomohiko Ohta, Fukushima, JP;
Izumi Fusegawa, Fukushima, JP;
Koji Kitagawa, Fukushima, JP;
Ryoji Hoshi, Fukushima, JP;
Masahiro Sakurada, Fukushima, JP;
Tomohiko Ohta, Fukushima, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
According to the present invention, there is disclosed a silicon single crystal wafer grown according to the CZ method which is a wafer having a diameter of 200 mm or more produced from a single crystal grown at a growth rate of 0.5 mm/min or more without doping except for a dopant for controlling resistance, wherein neither an octahedral void defect due to vacancies nor a dislocation cluster due to interstitial silicons exists as a grown-in defect, and a method for producing it. There can be provided a high quality silicon single crystal wafer having a large diameter wherein a silicon single crystal in which both of octahedral void defects and dislocation clusters which are growth defects are substantially eliminated is grown at higher rate compared with the conventional method by the usual CZ method, and furthermore by controlling a concentrations of interstitial oxygen in the crystal to be low, a precipitation amount is lowered and ununiformity of BMD in a plane of the wafer is improved, and provided a method for producing it.