Shin-Etsu Handotai Co., Ltd.

Tomohiko Ohta

Izumi Fusegawa

Masahiro Sakurada

Ryoji Hoshi

Susumu Sonokawa

Nobuaki Mitamura

Kosei Sugawara

Wataru Sato

Kiyotaka Takano

Koji Kitagawa

Hiroyuki Kamada

Hideki Yamanaka

Tetsuya Igarashi

Toshiro Hayashi

Ryouji Hoshi

Kouichi Inokoshi

Toshirou Hayashi

Norihiro Kobayashi

Hiroji Aga

Eiichi Iino

Atsushi Iwasaki

Atsushi Ozaki

Toru Ishizuka

Koji Mizuishi

Satoshi Soeta

Tohru Ishizuka

Takahiro Yanagimachi

Sadayuki Okuni

Toshiharu Uesugi

Tetsuhiro Oda

Yuuichi Miyahara

Wataru Yajima

Shigemaru Maeda

Yoshihiro Kodama

Toshio Hisaichi

Kirio Itoi

Yasuo Nagaoka

Yuichi Miyahara

Tatsuo Mori

Masashi Sonokawa

Nobuo Katuoka

Masayuki Arai

Takahide Onai

A single-crystal pulling apparatus includes: a pulling furnace having a heater and crucible; and a magnetic field generation device having superconducting coils, the device having four of the superconducting coils, two of the superconducting coils are in each of two regions divided by a cross section that includes an X axis being a direction of magnetic force lines at the central axis in the horizontal plane including all the coil axes of the four superconducting coils, and includes the pulling furnace central axis having line symmetry about the cross section, the four superconducting coils are all arranged so that the coil axes have an angle of more than −30° and less than 30° relative to a Y axis, the direction of the magnetic force lines thereof have line symmetry about the cross section, and in each of the regions, the two superconducting coils generate magnetic force lines in opposite directions.

Single-crystal pulling apparatus and single-crystal pulling method

A single-crystal pulling apparatus including: a pulling furnace having a central axis; and a magnetic field generation device arranged around the pulling furnace and having superconducting coils, the apparatus applying a horizontal magnetic field to the molten semiconductor raw material, two coil axes in the two pairs of the superconducting coils are included in a single horizontal plane, and when a direction of lines of magnetic force at the central axis of the pulling furnace in the horizontal plane is determined as an X axis, a center angle α having the X axis between the two coil axes is 100 degrees or more and 120 degrees or less. This makes it possible to reduce the height of the coils, to raise the magnetic field center close to the melt surface of the semiconductor raw material, and to obtain a single crystal having a lower oxygen concentration than conventional single crystals.

Single-crystal pulling apparatus with saddle-shaped superconducting coils and single-crystal pulling method

A method for producing a silicon single crystal, wherein a silicon nitride powder is introduced into a raw material before start of melting and the silicon single crystal doped with nitrogen is pulled by Czochralski method, wherein nitrogen doping is performed while an upper limit amount of usable silicon nitride powder is limited based on an amount of carbon impurities contained in the silicon nitride powder so that a carbon concentration in the silicon single crystal is equal to or less than allowable value. This makes it possible to achieve the required nitrogen doping amount at low cost while achieving the low carbon-concentration specification.

Method for producing a silicon single crystal doped with nitrogen and having a controlled amount of carbon impurities

A method of producing silicon single crystal ingot by pulling the silicon single crystal ingot made of an N-region by the CZ method, including: performing an EOSF inspection including a heat treatment to manifest oxide precipitates and selective etching on sample wafer from the silicon single crystal ingot composed of the N-region to measure a density of EOSF; performing a shallow-pit inspection to investigate a pattern of occurrence of a shallow pit; adjusting the pulling conditions according to result of identification of a defect region of the sample wafer by the EOSF and shallow-pit inspections to pull a next silicon single crystal ingot composed of the N-region, wherein in the identification of the defect region, for an N-region, what portion of an Nv-region or Ni-region the defect region corresponds to is also identified.

Method of producing silicon single crystal ingot

A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.

Method for producing direct bonded wafer and direct bonded wafer

In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually decreasing a growth rate of silicon single crystal during pulling and a growth rate at a boundary where a high oxygen precipitation Nv region having a density of BMDs of 1&#xd7;10numbers/cmor more and/or a wafer lifetime of 30 &#x3bc;sec or less after oxygen precipitation treatment disappears when gradually decreasing the growth rate further. Thereby, there is provided a silicon single crystal which does not belong to any of V region rich in vacancy, OSF region and I region rich in interstitial silicon, and has excellent electrical characteristics and gettering capability, so that yield of devices can be surely improved, and also an epitaxial wafer.

Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal

The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.

Method for producing single crystal and single crystal

The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing a raw material melt, wherein the heater has a uniform heat generation distribution to the raw material melt after deformation while in use during crystal manufacture. It is thus possible to prevent hindrance of monocrystallization and unstable crystal quality caused by ununiform temperature in the raw material melt due to deformation of the shape of the heater's heat generating portion while in use during crystal manufacture.

Heater for manufacturing a crystal

The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at &#xb1;5&#xb0; C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of &#x3c;110&#x3e;.

Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer

In a method for producing an SOI wafer comprising steps of implanting ions from a bond wafer surface to form an ion-implanted layer inside the wafer, bonding the ion-implanted bond wafer surface and a surface of a base wafer via an oxide film or directly, and forming an SOI wafer by delaminating by heat treatment a part of the bond wafer at the ion-implanted layer, the bond wafer is a silicon wafer that consists of a silicon single crystal grown by Czochralski method, that is occupied by N region outside OSF generated in a ring shape and that has no defect region detected by Cu deposition method. Thereby, even an extremely thin SOI layer having a thickness of 200 nm or less, can provide an SOI wafer that has an excellent electric property without micro pits caused by acid cleaning, and can be produced without increasing the number of processes.

SOI wafer and a method for producing an SOI wafer

There can be provided a silicon single crystal wafer grown according to Czochralski method wherein the whole plane of the wafer is occupied by N region on the outside of OSF generated in a shape of a ring by thermal oxidation treatment and there exists no defect region detected by Cu deposition. Thereby, there can be produced a silicon single crystal wafer according to CZ method, which does not belong to any of V region rich in vacancies, OSF region and I region rich in interstitial silicons, and can surely improve electric characteristics such as oxide dielectric breakdown voltage characteristics or the like under stable manufacture conditions.

Silicon single crystal wafer and method for producing silicon single crystal

According to the present invention, there is disclosed a silicon single crystal wafer grown according to the CZ method which is a wafer having a diameter of 200 mm or more produced from a single crystal grown at a growth rate of 0.5 mm/min or more without doping except for a dopant for controlling resistance, wherein neither an octahedral void defect due to vacancies nor a dislocation cluster due to interstitial silicons exists as a grown-in defect, and a method for producing it. There can be provided a high quality silicon single crystal wafer having a large diameter wherein a silicon single crystal in which both of octahedral void defects and dislocation clusters which are growth defects are substantially eliminated is grown at higher rate compared with the conventional method by the usual CZ method, and furthermore by controlling a concentrations of interstitial oxygen in the crystal to be low, a precipitation amount is lowered and ununiformity of BMD in a plane of the wafer is improved, and provided a method for producing it.

Silicon single crystal wafer and method for manufacturing the same

The present invention provides an apparatus and a method for producing a silicon semiconductor single crystal which can stabilize and homogenize an amount of precipitated oxygen in the direction of the crystal growth axis when growing a silicon semiconductor single crystal. The apparatus for producing a silicon semiconductor single crystal by the Czochralski method comprises a main growth furnace having a crucible retaining silicon melt disposed therein for growing a silicon semiconductor single crystal, and an upper growth furnace for housing therein and cooling the silicon semiconductor single crystal pulled from the silicon melt, wherein the upper growth furnace communicated to a ceiling section of the main growth furnace is provided with an upper insulating member for surrounding a pulled silicon semiconductor single crystal.

Apparatus and method for producing silicon semiconductor single crystal

An apparatus for growing a single crystal ( ) comprising at least a main chamber ( ) enclosing a crucible ( ) for accommodating a raw material melt ( ) and a heater ( ) for heating the raw material melt and a pulling chamber ( ) continuously provided above the main chamber, into which a grown single crystal is pulled and stored, wherein the apparatus further comprises a cooling cylinder ( ) that extends at least from a ceiling of the main chamber toward a raw material melt surface so as to surround a single crystal under pulling ( ) and is forcibly cooled with a cooling medium, and an auxiliary cooling member ( ) extending below the cooling cylinder and having a cylindrical shape or a shape tapered toward the downward direction. There is provided an apparatus for growing a single crystal that can exert cooling effect on a grown single crystal to the maximum extent so as to accelerate the crystal growth rate and safely produce a single crystal without leakage of cooling medium due to breakage etc.

Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal

The present invention provides a silicon wafer sliced from a silicon single crystal ingot grown by the Czochralski method under such conditions that V-rich region should become dominant, wherein count number of particles having a size of 0.1 &mgr;m or more is 1 count/cm or less when particles are counted by using a particle counter and a method for producing a silicon single crystal. Thus, there is provided a production technique that can improve productivity and reduce cost for high quality silicon wafers of excellent device characteristics by further reducing density and size of defects such as COP.

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Fukushima, Japan

Tomohiko Ohta