The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Sep. 21, 2001
Ryoji Hoshi, Fukushima, JP;
Koji Kitagawa, Fukushima, JP;
Izumi Fusegawa, Fukushima, JP;
Tomohiko Ohta, Fukushima, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
An apparatus for growing a single crystal ( ) comprising at least a main chamber ( ) enclosing a crucible ( ) for accommodating a raw material melt ( ) and a heater ( ) for heating the raw material melt and a pulling chamber ( ) continuously provided above the main chamber, into which a grown single crystal is pulled and stored, wherein the apparatus further comprises a cooling cylinder ( ) that extends at least from a ceiling of the main chamber toward a raw material melt surface so as to surround a single crystal under pulling ( ) and is forcibly cooled with a cooling medium, and an auxiliary cooling member ( ) extending below the cooling cylinder and having a cylindrical shape or a shape tapered toward the downward direction. There is provided an apparatus for growing a single crystal that can exert cooling effect on a grown single crystal to the maximum extent so as to accelerate the crystal growth rate and safely produce a single crystal without leakage of cooling medium due to breakage etc.