Essex Junction, VT, United States of America

Tom C Lee

This inventor holds 75 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Electrostatic Discharge Protection (CPC class H01L). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Advanced Micro Devices Corporation. Active years: 2006-2020.

USPTO Granted Patents = 75 (Patent Applications = 2)

% Patents Active = 49.3

EPO Patents = 1

Average Co-Inventor Count = 5.6

ph-index = 9

Forward Citations = 680(Granted Patents)

Forward Citations (Not Self Cited) = 667(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

62 out of 166,159

International Business Machines Corporation

Advanced Micro Devices Corporation

patents

4. 1 out of 52

Elpis Technologies Inc.

patents

where one patent can have more than one assignee

Years Active: 2006-2020

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Areas of Expertise:

Electrostatic Discharge

Semiconductor Structures

Electrical Pulse Anneal

Integrated Circuits

Thin Film Resistors

3D Resistors

High-Voltage Protection

Silicon Controlled Rectifier

On-Chip Wiring

Through Silicon Via

Capacitance Density

Isolated Wire Structures

75 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10755949 - Structures, methods and applications for electrical pulse anneal processes (2020-08-25),

2. 10297589 - Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode (2019-05-21),

3. 10283374 - Structures, methods and applications for electrical pulse anneal processes (2019-05-07),

4. 10109599 - Integrated circuit structure with continuous metal crack stop (2018-10-23),

5. 10037895 - Structures, methods and applications for electrical pulse anneal processes (2018-07-31),

6. 9881810 - Structures, methods and applications for electrical pulse anneal processes (2018-01-30),

7. 9831194 - Edge compression layers (2017-11-28),

8. 9704852 - Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode (2017-07-11),

9. 9685370 - Titanium tungsten liner used with copper interconnects (2017-06-20),

10. 9575115 - Methodology of grading reliability and performance of chips across wafer (2017-02-21),

11. 9536870 - SCR with fin body regions for ESD protection (2017-01-03),

12. 9425185 - Self-healing electrostatic discharge power clamp (2016-08-23),

13. 9413169 - Electrostatic discharge protection circuit with a fail-safe mechanism (2016-08-09),

14. 9391065 - Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode (2016-07-12),

15. 9287345 - Semiconductor structure with thin film resistor and terminal bond pad (2016-03-15),

Title: The Innovative Journey of Tom C Lee

Introduction: Tom C Lee, a pioneering inventor based in Essex Junction, VT (US), has made significant contributions to the field of technology through his inventive spirit and dedication to innovation.

Latest Patents: Tom C Lee holds several patents in various technological domains, showcasing his versatility and creativity in inventing novel solutions to complex problems. His latest patents focus on cutting-edge advancements in electronics and telecommunications.

Career Highlights: With a career spanning over two decades, Tom C Lee has established himself as a prominent figure in the tech industry. His innovative ideas have led to the development of groundbreaking technologies that have revolutionized the way we interact with the world around us.

Collaborations: Throughout his career, Tom C Lee has collaborated with leading tech companies, research institutions, and universities to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: In conclusion, Tom C Lee's passion for innovation and his relentless pursuit of excellence have cemented his reputation as a visionary inventor. His contributions to the field of technology continue to inspire future generations of inventors to push the boundaries of what is possible.