The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Dec. 22, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
James P. Di Sarro, Essex Junction, VT (US);
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Tom C. Lee, Essex Junction, VT (US);
Junjun Li, Williston, VT (US);
Souvick Mitra, Essex Junction, VT (US);
Christopher S. Putnam, Hinesburg, VT (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/74 (2006.01); H01L 29/06 (2006.01); G06F 17/50 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); G06F 17/5063 (2013.01); G06F 17/5072 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/66121 (2013.01); H01L 29/742 (2013.01); H01L 29/7408 (2013.01); H01L 29/7412 (2013.01); H01L 29/861 (2013.01); H01L 29/66393 (2013.01); H01L 29/7436 (2013.01);
Abstract
An electrostatic discharge protection circuit is disclosed. A method of manufacturing a semiconductor structure includes forming a semiconductor controlled rectifier including a first plurality of fingers between an n-well body contact and an anode in an n-well, and a second plurality of fingers between a p-well body contact and a cathode in a p-well.