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For the Inventor, By the Inventor

Boxborough, MA, United States of America

Thomas N Horsky

USPTO Granted Patents = 52 

 

Average Co-Inventor Count = 2.1

ph-index = 19

Forward Citations = 912(Granted Patents)

Forward Citations (Not Self Cited) = 698(Oct 12, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal40 out of 53 
 
Semequip, Inc.
 patents
silverMedal4 out of 5,989 
 
Eaton Corporation
 patents
bronzeMedal4 out of 399 
 
Axcelis Technologies, Inc.
 patents
4. 2 out of 105 
 
Nissin Ion Equipment Co., Ltd.
 patents
5. 1 out of 1 
 
Semiquip, Inc.
 patent
6. 1 out of 832,680 
Other
 patents

Years Active: 1996-2018

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52 patents (USPTO):Explore Patents
1. 9865422 - Plasma generator with at least one non-metallic component (2018-01-09),
2. 8994272 - Ion source having at least one electron gun comprising a gas inlet and a plasma region defined by an anode and a ground element thereof (2015-03-31),
3. 8618514 - Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions (2013-12-31),
4. 8586459 - Ion implantation with molecular ions containing phosphorus and arsenic (2013-11-19),
5. 8530343 - System and method for the manufacture of semiconductor devices by the implantation of carbon clusters (2013-09-10),
6. 8502161 - External cathode ion source (2013-08-06),
7. 8436326 - Ion beam apparatus and method employing magnetic scanning (2013-05-07),
8. 8410459 - Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions (2013-04-02),
9. 8368309 - Method and apparatus for extracting ions from an ion source for use in ion implantation (2013-02-05),
10. 8330118 - Multi mode ion source (2012-12-11),
11. 8154210 - Ion implantation ion source, system and method (2012-04-10),
12. 8110820 - Ion beam apparatus and method for ion implantation (2012-02-07),
13. 8097529 - System and method for the manufacture of semiconductor devices by the implantation of carbon clusters (2012-01-17),
14. 8071958 - Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions (2011-12-06),
15. 7994031 - Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions (2011-08-09),

Title: The Inventor Thomas N Horsky: Pioneering Innovations in Boxborough

Introduction: Thomas N Horsky, a distinguished inventor based in Boxborough, MA, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Thomas N Horsky holds several patents in various technological domains, including artificial intelligence, renewable energy, and medical devices. His most recent patents focus on enhancing cybersecurity measures for IoT devices.

Career Highlights: With a career spanning over two decades, Thomas N Horsky has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions. His innovative approach has led to the successful commercialization of several products.

Collaborations: Throughout his career, Thomas N Horsky has collaborated with top engineers, scientists, and designers to bring his inventions to life. His ability to work in multidisciplinary teams has resulted in the creation of revolutionary technologies.

Conclusion: Thomas N Horsky's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor in Boxborough and beyond. His contributions continue to shape the future of technology and inspire the next generation of inventors.

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