Semequip, Inc.

Eaton Corporation

Axcelis Technologies, Inc.

Nissin Ion Equipment Co., Ltd.

Other

Semiquip, Inc.

Thomas N Horsky

Dale Conrad Jacobson

Wade Krull

Sami K Hahto

George P Sacco, Jr

John Noel Williams

Robert W Milgate, Iii

Brian C Cohen

William E Reynolds

Hilton Frank Glavish

Edward K McIntyre

Richard M Cloutier

Alexander S Perel

Nariaki Hamamoto

Nobuo Nagai

Masao Naito

Tommy D Hollingsworth

William K Loizides

Richard Goldberg

Victor M Benveniste

John Youngfu Chen

Richard David Goldberg

Piero Sferlazzo

Dale C Jacobson

Dennis Manning

Karuppanan Sekar

Erin Dyker

Brian Bernstein

Wade A Krull

Robert W Iii Milgate

A plasma generator for an ion implanter is provided. The plasma generator includes an ionization chamber for forming a plasma that is adapted to generate a plurality of ions and a plurality of electrons. An interior surface of the ionization chamber is exposed to the plasma and constructed from a first non-metallic material. The plasma generator also includes a thermionic emitter including at least one surface exposed to the plasma. The thermionic emitter is constructed from a second non-metallic material. The plasma generator further includes an exit aperture for extracting at least one of the plurality of ions or the plurality of electrons from the ionization chamber to form at least one of an ion beam or an electron flux. The ion beam or the electron flux comprises substantially no metal. The first and second non-metallic materials can be the same or different from each other.

Plasma generator with at least one non-metallic component

An ion source is provided that includes at least one electron gun. The electron gun includes an electron source for generating a beam of electrons and an inlet for receiving a gas. The electron gun also includes a plasma region defined by at least an anode and a ground element, where the plasma region can form a plasma from the gas received via the inlet. The plasma can be sustained by at least a portion of the beam of electrons. The electron gun further includes an outlet for delivering at least one of (i) ions generated by the plasma or (ii) at least a portion of the beam of electrons generated by the electron source.

Ion source having at least one electron gun comprising a gas inlet and a plasma region defined by an anode and a ground element thereof

A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.

Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. The clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx, or AnRHx, where n and x are integers with 4&#x3c;n and x&#x2267;0, and A is either As or P, and R is a molecule not containing phosphorus or arsenic, which is not injurious to the implantation process.

Ion implantation with molecular ions containing phosphorus and arsenic

A process is disclosed which incorporates implantation of a carbon cluster into a substrate to improve the characteristics of transistor junctions when the substrates are doped with Boron and Phosphorous in the manufacturing of PMOS transistor structures in integrated circuits. There are two processes which result from this novel approach: (1) diffusion control for USJ formation; and (2) high dose carbon implantation for stress engineering. Diffusion control for USJ formation is demonstrated in conjunction with a boron or shallow boron cluster implant of the source/drain structures in PMOS. More particularly, first, a cluster carbon ion, such as CH, is implanted into the source/drain region at approximately the same dose as the subsequent boron implant; followed by a shallow boron, boron cluster, phosphorous or phosphorous cluster ion implant to form the source/drain extensions, preferably using a borohydride cluster, such as BHor BH. Upon subsequent annealing and activation, the boron diffusion is reduced, due to the gettering of interstitial defects by the carbon atoms.

System and method for the manufacture of semiconductor devices by the implantation of carbon clusters

An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.

External cathode ion source

A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

Ion beam apparatus and method employing magnetic scanning

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form BHand BH, where 10&#x2266;n&#x2266;100 and 0&#x2266;x&#x2266;n+4.

Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition.

Method and apparatus for extracting ions from an ion source for use in ion implantation

A multi mode ion implantation system, which operates in both an arc discharge mode of operation and a non arc discharge mode of operation, is described. The multi mode ion implantation system may consist of dual ionization volumes forming two ion sources, an arc discharge source and a non arc discharge source, in tandem. The dual chambers and the two sources feed the ion implantation system with material of various species for multi mode, an arc discharge and a non arc discharge operation.

Multi mode ion source

An ion source is disclosed incorporating various aspects of the invention including i) a vaporizer, ii) a vaporizer valve, iii) a gas feed, iv) an ionization chamber, v) an electron gun, vi) a cooled mounting frame, and vii) an ion exit aperture. The ion source includes means for introducing gaseous feed material into the ionization chamber, means for vaporizing solid feed materials and introducing their vapors into the ionization chamber, means for ionizing the introduced gaseous feed materials within the ionization chamber, and means for extracting the ions thus produced from an ion exit aperture adjacent to the ionization region. In addition, means for accelerating and focusing the exiting ions are provided. The vaporizer, vaporizer valve, gas feed, ionization chamber, electron gun, cooled mounting frame, and ion exit aperture are all integrated into a single assembly in preferred embodiments of the novel ion source.

Ion implantation ion source, system and method

A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept art ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight.

Ion beam apparatus and method for ion implantation

A method of manufacturing a semiconductor device is further described, comprising the steps of providing a supply of dopant atoms or molecules into an ionization chamber, combining the dopant atoms or molecules into clusters containing a plurality of dopant atoms, ionizing the dopant clusters into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ion by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant clusters contain n dopant atoms where n can be 2, 3, 4 or any integer number. This method provides the advantages of increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy. This is an effective method for making shallow transistor junctions, where it is desired to implant with a low energy per dopant atom.

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Boxborough, MA, United States of America

Thomas N Horsky