The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Nov. 05, 2007
Thomas N. Horsky, Boxborough, MA (US);
Erin Dyker, Halifax, CA;
Brian Bernstein, Lexington, MA (US);
Dennis Manning, Commerce, OK (US);
Thomas N. Horsky, Boxborough, MA (US);
Erin Dyker, Halifax, CA;
Brian Bernstein, Lexington, MA (US);
Dennis Manning, Commerce, OK (US);
SemEquip, Inc., Billerica, MA (US);
Abstract
An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. The clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx, or AnRHx, where n and x are integers with 4<n and x≧0, and A is either As or P, and R is a molecule not containing phosphorus or arsenic, which is not injurious to the implantation process.