Erin Dyker

Title: Erin Dyker: Innovator in Semiconductor Technology

Introduction

Erin Dyker is a prominent inventor based in Halifax, Canada. She has made significant contributions to the field of semiconductor technology, particularly through her innovative patent related to ion implantation.

Latest Patents

Erin Dyker holds a patent for "Ion implantation with molecular ions containing phosphorus and arsenic." This patent describes an ion implantation device and a method for manufacturing semiconductor devices. The invention involves implanting ionized phosphorus-containing molecular clusters to form N-type transistor structures. These clusters are essential for providing N-type doping for Source and Drain structures, as well as for Pocket or Halo formation and counter-doping Poly gates. The molecular cluster ions have the chemical form AnHx or AnRHx, where n and x are integers, and A is either arsenic or phosphorus.

Career Highlights

Throughout her career, Erin has demonstrated a strong commitment to advancing semiconductor technology. Her work has been instrumental in the development of NMOS transistors, which are critical components in modern electronic devices.

Collaborations

Erin collaborates with notable colleagues, including Thomas N Horsky and Brian Bernstein, who contribute to her innovative projects and research endeavors.

Conclusion

Erin Dyker's contributions to semiconductor technology through her patent and collaborative efforts highlight her role as a leading inventor in her field. Her work continues to influence the development of advanced electronic components.