Semequip, Inc.

Erin Dyker

Thomas N Horsky

Dennis Manning

Brian Bernstein

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. The clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx, or AnRHx, where n and x are integers with 4&#x3c;n and x&#x2267;0, and A is either As or P, and R is a molecule not containing phosphorus or arsenic, which is not injurious to the implantation process.

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Halifax, Canada

Erin Dyker