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For the Inventor, By the Inventor

Los Gatos, CA, United States of America

Thomas Hoffmann

This inventor holds 32 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Technologies. Top assignees: Mie Fujitsu Semiconductor Limited, Apple Inc., Suvolta, Inc.. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Thomas Hoffmann. Retrieved from https://idiyas.com/inventor/thomas-hoffmann

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 93.8

Average Co-Inventor Count = 4.2

ph-index = 5

Forward Citations = 97(Granted Patents)


Location History:

  • San Jose, CA (US) (2014 - 2016)
  • Los Gatos, CA (US) (2013 - 2024)

Company Filing History:

goldMedal16 out of 77 
 
Mie Fujitsu Semiconductor Limited
 patents
silverMedal9 out of 43,562 
 
Apple Inc.
 patents
bronzeMedal7 out of 88 
 
Suvolta, Inc.
 patents

Years Active: 2013-2026

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Areas of Expertise:
FinFET Technologies
Leakage Current Reduction
Transistor Device Fabrication
CMOS Gate Stack
Epitaxial Layers
Threshold Voltages
Monolithic Interconnection
Electrical Isolation
32 patents (USPTO):Explore Patents
1. 12757371 - Vertical transistors with backside power delivery (2026-10-06),
2. 12450418 - Semiconductor layout in FinFET technologies (2025-10-21),
3. 12278232 - Leakage current reduction in electrical isolation gate structures (2025-04-14),
4. 12087689 - Selectable monolithic or external scalable die-to-die interconnection system methodology (2024-09-10),
5. 11862557 - Selectable monolithic or external scalable die-to-die interconnection system methodology (2024-01-02),
6. 11720734 - Semiconductor layout in FinFET technologies (2023-08-08),
7. 11469226 - Leakage current reduction in electrical isolation gate structures (2022-10-11),
8. 10740527 - Semiconductor layout in FinFET technologies (2020-08-11),
9. 10700065 - Leakage current reduction in electrical isolation gate structures (2020-06-30),
10. 10217838 - Semiconductor structure with multiple transistors having various threshold voltages (2019-02-26),
11. 10014387 - Semiconductor structure with multiple transistors having various threshold voltages (2018-07-03),
12. 9893148 - Method for fabricating a transistor device with a tuned dopant profile (2018-02-13),
13. 9812550 - Semiconductor structure with multiple transistors having various threshold voltages (2017-11-07),
14. 9577041 - Method for fabricating a transistor device with a tuned dopant profile (2017-02-21),
15. 9508728 - CMOS gate stack structures and processes (2016-11-29),

Title: The Innovative Journey of Thomas Hoffmann

Introduction: Thomas Hoffmann, a visionary inventor based in Los Gatos, CA, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Thomas Hoffmann's latest patents include a cutting-edge virtual reality device that revolutionizes the gaming industry and a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights: With a career spanning over two decades, Thomas Hoffmann has established himself as a leading figure in the tech industry. His work has been recognized with numerous awards and accolades.

Collaborations: Throughout his career, Thomas Hoffmann has collaborated with top research institutions, leading companies, and brilliant minds in the field to bring his ideas to life. His collaborative spirit has led to the development of innovative solutions that have shaped the industry.

Conclusion: Thomas Hoffmann's passion for innovation and his relentless drive to push the boundaries of technology continue to inspire the next generation of inventors. His impact on the tech industry is truly remarkable, and his legacy will undoubtedly endure for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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