The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Jun. 26, 2020
Applicant:
Apple Inc., Cupertino, CA (US);
Inventors:
Emre Alptekin, Santa Clara, CA (US);
Thomas Hoffmann, Los Gatos, CA (US);
Assignee:
Apple Inc., Cupertino, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/02 (2006.01); G06F 30/398 (2020.01);
U.S. Cl.
CPC ...
H01L 27/0883 (2013.01); G06F 30/398 (2020.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01);
Abstract
In an embodiment, an integrated circuit includes transistors in different active regions, electrically isolated using single diffusion break isolation. The single diffusion break isolation includes a first dummy transistor that has a different threshold voltage than the transistors in either active region for which the single diffusion break is creating isolation. The first dummy transistor may have lower leakage current than transistors in either active region, creating effective isolation between the active regions and consuming relatively small amounts of power due to the lower leakage currents.