The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Feb. 18, 2016
Mie Fujitsu Semiconductor Limited, Kuwana, JP;
Dalong Zhao, San Jose, CA (US);
Teymur Bakhishev, San Jose, CA (US);
Lance Scudder, Sunnyvale, CA (US);
Paul E. Gregory, Palo Alto, CA (US);
Michael Duane, San Carlos, CA (US);
U. C. Sridharan, San Jose, CA (US);
Pushkar Ranade, Los Gatos, CA (US);
Lucian Shifren, San Jose, CA (US);
Thomas Hoffmann, Los Gatos, CA (US);
MIE FUJITSU SEMICONDUCTOR LIMITED, Kuwana, JP;
Abstract
A semiconductor structure includes first, second, and third transistor elements each having a first screening region concurrently formed therein. A second screening region is formed in the second and third transistor elements such that there is at least one characteristic of the screening region in the second transistor element that is different than the second screening region in the third transistor element. Different characteristics include doping concentration and depth of implant. In addition, a different characteristic may be achieved by concurrently implanting the second screening region in the second and third transistor element followed by implanting an additional dopant into the second screening region of the third transistor element.