Tokyo, Japan

Tetsuya Yoshida

This inventor holds 17 USPTO granted patents and 7 published patent applications and 2 EPO patents, primarily in Semiconductor Devices. Top assignees: Renesas Electronics Corporation, Hodogaya Chemical Co., Ltd., Hitachi Industrial Products, Ltd.. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tetsuya Yoshida. Retrieved from https://idiyas.com/inventor/tetsuya-yoshida-yf0lw8do

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 76.5

 

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Kanagawa, JP (2016 - 2018)
  • Tokyo, JP (2006 - 2024)

Company Filing History:


Years Active: 2006-2026

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Areas of Expertise:
Semiconductor Device
Manufacturing Method
Circuit Substrate
Gate Electrode
Turbomachine
Hair Coloration
Charge Control Agent
Toner
Developer
Transistors
Composition
17 patents (USPTO):Explore Patents

Title: Tetsuya Yoshida: Innovator in Semiconductor Technology

Introduction

Tetsuya Yoshida is a prominent inventor based in Tokyo, Japan, known for his significant contributions to semiconductor technology. With a total of 15 patents to his name, he has made remarkable advancements in the field, particularly in the manufacturing of semiconductor devices.

Latest Patents

Yoshida's latest patents include a semiconductor device and a method of manufacturing the same. In his first patent, a gate electrode is formed inside a trench via a gate insulating film. The process involves removing the gate insulating film formed on a semiconductor substrate, followed by the formation of an insulating film on the substrate. A p-type base region is created in the semiconductor substrate, along with an n-type emitter region in the base region. A hydrogen annealing process is then performed on the substrate, ensuring that the boundary between the base and emitter regions is positioned deeper than the insulating film. His second patent details a method of manufacturing a semiconductor device, where a first MISFET is formed on a semiconductor layer of an SOI substrate in a circuit region, and a second MISFET is created for TEG inspection. This process includes forming an interlayer insulating film, creating contact holes, and forming plugs in those holes, with specific connections to the semiconductor substrate.

Career Highlights

Throughout his career, Tetsuya Yoshida has worked with notable companies such as Renesas Electronics Corporation and Hodogaya Chemical Co., Ltd. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.

Collaborations

Yoshida has collaborated with talented individuals in the field, including Yoshiki Yamamoto and Koetsu Sawai. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Tetsuya Yoshida's work in semiconductor technology exemplifies the spirit of innovation and dedication to advancing the field. His patents and collaborations highlight his significant impact on the industry, making him a key figure in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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