Renesas Electronics Corporation

Hodogaya Chemical Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Konica-minolta Holdings, Inc.

Hitachi Industrial Products, Ltd.

Hitachi, Ltd.

Tetsuya Yoshida

Yoshiki Yamamoto

Koetsu Sawai

Masami Ito

Masaki Okubo

Hideki Aono

Makoto Ogasawara

Motonori Tsuji

Masaya Tojo

Masafumi Asakai

Takeshi Yamamoto

Yukio Takahashi

Hitoshi Yamamoto

Shinichiro Abe

Hideki Makiyama

Shinichi Okamoto

Kazuhiro Murata

Hiroshi Yokoyama

Hideaki Yamakoshi

Kazuyuki Yamaguchi

Naohito Suzumura

Keiichi Maekawa

Yuto Omizu

Keigo Naito

Koji Ogata

Ikuo Kimura

Tomohiro Imai

Yuusuke Kawahara

Zhichao Lin

Tomohiro Tomizawa

Takuma Ueno

Shichao Peng

Taiju Katayama

A gate electrode is formed inside a trench via a gate insulating film. The gate insulating film formed on a semiconductor substrate is removed. An insulating film is formed on the semiconductor substrate. A p-type base region is formed in the semiconductor substrate. An n-type emitter region is formed in the base region. Hydrogen annealing process is performed to the semiconductor substrate. A boundary between the base region and the emitter region is located at a position deeper than the insulating film formed between a side surface of the trench and the gate insulating film.

Semiconductor device and method of manufacturing the same

A first MISFET is formed on a semiconductor layer of an SOI substrate in a circuit region and a second MISFET composing a TEG for VC inspection is formed on the semiconductor layer of the SOI substrate in a TEG region. An interlayer insulating film is formed, contact holes are formed in the interlayer insulating film, and plugs are formed in the contact holes, respectively. In the TEG region, the plugs include a plug electrically connected to both the semiconductor substrate composing the SOI substrate and the semiconductor layer composing the SOI substrate.

Method of manufacturing semiconductor device

A dye for hair coloration that has a long shelf life and is excellent in heat resistance, and a method for producing the dye for hair coloration, are provided. A dye for hair coloration represented by the following general formula (1), the dye for hair coloration having a proportion of a polyatomic anion (An) or impurities derived from An of 1% by mass or less: wherein in the formula (1), D represents a cationic moiety of the dye for hair coloration; An represents a polyatomic anion; and a and b each independently represent a value of 0 to 1.

Dye for hair coloration, composition for hair coloration containing dye, and method for producing dye

To provide a semiconductor device having improved reliability. The semiconductor device has, on a SOI substrate thereof having a semiconductor substrate, an insulating layer, and a semiconductor layer, a gate insulating film having an insulating film and a high dielectric constant film. The high dielectric constant film has a higher dielectric constant than a silicon oxide film and includes a first metal and a second metal. In the high dielectric constant film, the ratio of the number of atoms of the first metal to the total number of atoms of the first metal and the second metal is equal to or more than 75%, and less than 100%.

Semiconductor device and method of manufacturing same

Leakage of a working fluid from a shaft sealing device of a turbomachine which handles a liquid as the working liquid is reduced and also unstable fluid force which acts on a rotor is reduced. For this purpose, the turbomachine has a rotor having an impeller, a bearing which rotatably supports the rotor, a casing which contains the rotor therein and forms a stationary flow passage, and the shaft sealing device which reduces the leakage of the working fluid through a gap part between the casing and the rotor. The working fluid is a liquid. A plurality of axial grooves which are intermittently arranged in axial direction and circumferential direction of the rotor with a land part being interposed are provided in an inner circumferential surface of the shaft sealing device.

Turbomachine

To provide a semiconductor device having improved reliability. An element isolation region comprised mainly of silicon oxide is buried in a trench formed in a semiconductor substrate. The semiconductor substrate in an active region surrounded by the element isolation region has thereon a gate electrode for MISFET via a gate insulating film. The gate electrode partially extends over the element isolation region and the trench has a nitrided inner surface. Below the gate electrode, fluorine is introduced into the vicinity of a boundary between the element isolation region and a channel region of MISFET.

To predict a temperature rise amount due to self-heating of a resistance value of a gate electrode with high accuracy in an HCI accelerated stress test. A gate electrode for gate resistance measurement (for temperature monitoring) that has contacts on its both sides, respectively, is disposed adjacent to the gate electrode. At the time of gate ON of the gate electrode, voltages that are substantially the same voltages as that of the gate electrode and have a minute potential difference between its contacts are applied between the contacts of the gate electrode for gate resistance measurement (for temperature monitoring), and a resistance value of the gate electrode for gate resistance measurement (for temperature monitoring) is measured.

Semiconductor device and method for manufacturing the same

To make a gate insulating film of a selecting transistor coupled in series to a MONOS memory transistor thinner and to ensure insulation resistance of the gate insulating film, the selecting transistor and the memory transistor, which constitute a memory cell, are formed on an SOI substrate, and an extension region of the selecting transistor is formed to be away from a selecting gate electrode in a plan view. A drain region of the selecting transistor and a source region of the memory transistor share the same semiconductor region with each other.

Semiconductor device including transistors formed in regions of semiconductor substrate and operation method of the same

When VC inspection for a TEG is performed, it is easily detected whether any failure of a contact plug occurs or not by increasing an emission intensity of a contact plug, so that reliability of a semiconductor device is improved. An element structure of an SRAM is formed on an SOI substrate in a chip region. Also, in a TEG region, an element structure of an SRAM in which a contact plug is connected to a semiconductor substrate is formed on the semiconductor substrate exposed from an SOI layer and a BOX film as a TEG used for the VC inspection.

Semiconductor device and manufacturing method thereof

To provide a charge control agent and a toner having a superior charging characteristic. A charge control agent containing a bis-phthalimide derivative represented by formula. Thus, it is possible to provide a safe, negative chargeability charge control agent with which the rate of rise of the charge can be increased, and which has a high charging amount and poses no problem in terms of waste regulations. Furthermore, it is possible to provide a negatively chargeable toner (and particularly, a negatively chargeable polymerized toner) for electrostatic image development which uses this charging control agent and has a superior charging characteristic.

Charge control agent and toner using same

The present invention provides a toner that includes a charge control agent containing one or two or more resorcin derivatives represented by the following formula (1), a colorant, and a binder resin. 

Toner, developer, and toner cartridge

A manufacturing method of a circuit substrate, in which an electronic circuit is formed on a surface of a base member by a solution jetting device. The manufacturing method comprises: jetting liquid drops of a solution which is supplied into a nozzle having a discharge port with an inner diameter of 0.1 &#x3bc;m to 100 &#x3bc;m and includes a plurality of fine particles to form an electronic circuit by melting and sticking to one another and a dispersant for dispersing the fine particles, from the discharge port toward the surface of the base member by applying a voltage of an arbitrary waveform to the solution to charge the solution; and exposing the jetted liquid drops received on the surface of the base member to light or heat to make the fine particles melt and stick to one another.

Manufacturing method of circuit substrate, circuit substrate and manufacturing device of circuit substrate

Growing community of inventors

Tokyo, Japan

Tetsuya Yoshida