The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Jan. 25, 2018
Renesas Electronics Corporation, Tokyo, JP;
Keiichi Maekawa, Tokyo, JP;
Hideaki Yamakoshi, Tokyo, JP;
Shinichiro Abe, Tokyo, JP;
Hideki Makiyama, Tokyo, JP;
Tetsuya Yoshida, Tokyo, JP;
Yuto Omizu, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
To make a gate insulating film of a selecting transistor coupled in series to a MONOS memory transistor thinner and to ensure insulation resistance of the gate insulating film, the selecting transistor and the memory transistor, which constitute a memory cell, are formed on an SOI substrate, and an extension region of the selecting transistor is formed to be away from a selecting gate electrode in a plan view. A drain region of the selecting transistor and a source region of the memory transistor share the same semiconductor region with each other.