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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11239337 B1

PDFFull Text
Date of Patent:
Feb. 01, 2022

Filed:

Dec. 03, 2020

Semiconductor device and method of manufacturing same

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Tetsuya Yoshida, Tokyo, JP;

Assignee:

Renesas Electronics Corporation, Tokyo, JP;

Attorney:

SGPatents PLLC

Primary Examiner:

Earl N Taylor

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 21/022 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02194 (2013.01); H01L 21/02244 (2013.01); H01L 21/02249 (2013.01); H01L 21/84 (2013.01); H01L 27/092 (2013.01); H01L 27/1203 (2013.01); H01L 29/1087 (2013.01); H01L 29/41725 (2013.01); H01L 29/4908 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/665 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66628 (2013.01); H01L 29/78621 (2013.01); H01L 21/823857 (2013.01);
Abstract

To provide a semiconductor device having improved reliability. The semiconductor device has, on a SOI substrate thereof having a semiconductor substrate, an insulating layer, and a semiconductor layer, a gate insulating film having an insulating film and a high dielectric constant film. The high dielectric constant film has a higher dielectric constant than a silicon oxide film and includes a first metal and a second metal. In the high dielectric constant film, the ratio of the number of atoms of the first metal to the total number of atoms of the first metal and the second metal is equal to or more than 75%, and less than 100%.

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