The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Mar. 16, 2023
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Koji Ogata, Tokyo, JP;

Tetsuya Yoshida, Tokyo, JP;

Yukio Takahashi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 12/01 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 12/038 (2025.01); H10D 62/127 (2025.01);
Abstract

A semiconductor device includes an n-type semiconductor substrate, a trench, a gate electrode formed in the trench via the gate insulating film, a p-type base region formed in the semiconductor substrate, and an n-type emitter region formed in the base region. The trench extends in a Y direction, in a plan view. Adjacent ones of a plurality of emitter regions are formed to be spaced apart from each other by a distance, along the Y direction. The distance is wider than ⅕ of a width of each of the emitter regions in the Y direction and narrower than the width.


Find Patent Forward Citations

Ogata, Koji. (2026). Semiconductor device including a gate electrode formed in a trench and method of manufacturing the same (U.S. Patent No. 12684793). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12684793

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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