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For the Inventor, By the Inventor

Chu-Pei, Taiwan

Te-Chih Huang

This inventor holds 23 USPTO granted patents and 1 published patent application, primarily in Semiconductor Metrology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Asml Netherlands B.v.. Active years: 2010-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Te-Chih Huang. Retrieved from https://idiyas.com/inventor/te-chih-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23 

% Patents Active = 69.6

Average Co-Inventor Count = 4.7

ph-index = 4

Forward Citations = 133(Granted Patents)


Location History:

  • Chu-Bei, Shin-Chu County, TW (2010)
  • Chu-Bei, TW (2010 - 2016)
  • Veldhoven, NL (2018 - 2022)
  • Hsinchu, TW (2018 - 2024)

Company Filing History:

goldMedal18 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal5 out of 5,080 
 
Asml Netherlands B.v.
 patents

Years Active: 2010-2025

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Areas of Expertise:
Defect Inspection
Overlay Measurement
Lithography
Critical Dimension
Metrology Methods
Photomask
Semiconductor Fabrication
Intensity Selective Exposure
Process Parameter
Alignment Techniques
Mask Haze Detection
23 patents (USPTO):Explore Patents
1. 12196687 - Method for inspecting pattern defects (2025-01-14),
2. 12055860 - Multi-function overlay marks for reducing noise and extracting focus and critical dimension information (2024-08-06),
3. 11835864 - Multi-function overlay marks for reducing noise and extracting focus and critical dimension information (2023-12-05),
4. 11624985 - Methods of defect inspection (2023-04-11),
5. 11448975 - Multi-function overlay marks for reducing noise and extracting focus and critical dimension information (2022-09-20),
6. 11320745 - Measuring a process parameter for a manufacturing process involving lithography (2022-05-03),
7. 10915017 - Multi-function overlay marks for reducing noise and extracting focus and critical dimension information (2021-02-09),
8. 10795270 - Methods of defect inspection (2020-10-06),
9. 10180628 - Method of determining critical-dimension-related properties, inspection apparatus and device manufacturing method (2019-01-15),
10. 10162272 - Metrology method and apparatus, substrates for use in such methods, lithographic system and device manufacturing method (2018-12-25),
11. 10073357 - Measuring a process parameter for a manufacturing process involving lithography (2018-09-11),
12. 9903823 - Metrology method and apparatus (2018-02-27),
13. RE45943 - Measurement of overlay offset in semiconductor processing (2016-03-21),
14. 9201022 - Extraction of systematic defects (2015-12-01),
15. 9026957 - Method of defining an intensity selective exposure photomask (2015-05-05),

Title: The Innovative Journey of Te-Chih Huang

Introduction: Te-Chih Huang, a pioneering inventor hailing from Chu-Bei, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Te-Chih Huang's latest patents showcase his commitment to innovation and include advancements in the fields of electronics, renewable energy, and sustainable technologies.

Career Highlights: Throughout his illustrious career, Te-Chih Huang has been at the forefront of technological advancements, leading research and development projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Te-Chih Huang has collaborated with leading research institutions, universities, and companies around the world to bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of innovation and driving progress in various sectors.

Conclusion: Te-Chih Huang's passion for innovation, coupled with his dedication to pushing the boundaries of technology, has solidified his reputation as a visionary inventor. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancements globally.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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