Svetlana Radovanov

This inventor holds 54 USPTO granted patents and 3 published patent applications, primarily in Ion Beam Technology (CPC class H01J). Top assignees: Varian Semiconductor Equipment Associates, Inc., Applied Materials, Inc.. Active years: 2006-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Svetlana Radovanov. Retrieved from https://idiyas.com/inventor/svetlana-radovanov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 54 (Patent Applications = 3)

% Patents Active = 92.6

Average Co-Inventor Count = 4.2

ph-index = 7

Forward Citations = 277(Granted Patents)

Forward Citations (Not Self Cited) = 231(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Marblehead, MA (US) (2006 - 2018)
Brookline, MA (US) (2014 - 2023)

Company Filing History:

46 out of 916

Varian Semiconductor Equipment Associates, Inc.

patents

8 out of 14,482

Applied Materials, Inc.

patents

Years Active: 2006-2024

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Areas of Expertise:

Ion Source

Tubular Cathode

Beam Quality Control

Plasma Processing

High Brightness Ion Beams

Boron Implanting

Mass Analyzed Ion Beam

Electrode Techniques

Plasma Control

Energy Filter

Ion Beam Uniformity

Co-implantation

54 patents (USPTO):Sort by Forward CitationsExplore Patents

1. D1051838 - Single-slot tubular cathode (2024-11-19),

2. 11631567 - Ion source with single-slot tubular cathode (2023-04-18),

3. 11600473 - Ion source with biased extraction plate (2023-03-07),

4. 11424097 - Ion source with tubular cathode (2022-08-23),

5. D956005 - Shaped electrode (2022-06-28),

6. 11127557 - Ion source with single-slot tubular cathode (2021-09-21),

7. 11049691 - Ion beam quality control using a movable mass resolving device (2021-06-29),

8. 10923306 - Ion source with biased extraction plate (2021-02-16),

9. 10748738 - Ion source with tubular cathode (2020-08-18),

10. 10468224 - Apparatus and method for controlling ion beam properties using energy filter (2019-11-05),

11. 10290470 - Negative ribbon ion beams from pulsed plasmas (2019-05-14),

12. 10290466 - Boron implanting using a co-gas (2019-05-14),

13. 10290462 - High brightness ion beam extraction using bias electrodes and magnets proximate the extraction aperture (2019-05-14),

14. 10049861 - Inductively coupled RF plasma source with magnetic confinement and Faraday shielding (2018-08-14),

15. 9988711 - Apparatus and method for multilayer deposition (2018-06-05),

Title: The Inventor Profile: Svetlana Radovanov

Introduction:

Svetlana Radovanov, a visionary inventor based in Brookline, MA, is a remarkable figure in the field of ion source technology. With an impressive portfolio of 53 patents, his contributions have significantly advanced the realm of plasma-based applications.

Latest Patents:

Radovanov's latest patents showcase his innovative prowess in ion source technologies. The "Ion source with single-slot tubular cathode" and "Ion source with biased extraction plate" inventions demonstrate his expertise in optimizing ion source operation for enhanced efficiency and performance.

Career Highlights:

Having worked at prestigious companies such as Varian Semiconductor Equipment Associates, Inc. and Applied Materials, Inc., Radovanov has honed his skills and made groundbreaking advancements in the semiconductor industry. His work reflects a deep understanding of plasma physics and its applications in semiconductor processing.

Collaborations:

Throughout his career, Radovanov has collaborated with esteemed professionals in the field, including coworkers like Bon-Woong Koo and Frank Sinclair. These collaborations have enriched his work, fostering a culture of innovation and knowledge exchange.

Conclusion:

In conclusion, Svetlana Radovanov stands as a trailblazing inventor whose contributions have left a lasting impact on ion source technology. His relentless pursuit of innovation and dedication to pushing boundaries continue to inspire the next generation of inventors in the field.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

3 patents pending: