The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Nov. 10, 2017
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Bon-Woong Koo, Andover, MA (US);
Vikram M. Bhosle, North Reading, MA (US);
John A. Frontiero, Rockport, MA (US);
Nicholas P. T. Bateman, Reading, MA (US);
Timothy J. Miller, Ipswich, MA (US);
Svetlana B. Radovanov, Brookline, MA (US);
Min-Sung Jeon, Jeoniu, KR;
Peter F. Kurunczi, Cambridge, MA (US);
Christopher J. Leavitt, Gloucester, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.